Marian Kazimierczuk (Advisor)
Master of Science in Engineering (MSEgr)
Investigation has been done on procedure, development, and verification of transistor topology for Aluminum-Gallium Nitride/Gallium Nitride (AlGaN/GaN) High-Electron Mobility Transistor (HEMTs). To date various models have been published that address modeling issues dealing with AlGaN/GaN HEMTs. Many models rely on analytic parameter solutions to help define model behavior. In order to find an optimum transistor at X-band frequency, 8-12 Gigahertz (GHz), layout, testing, modeling and simulation was conducted on various transistor topologies. Theoretical and experimental analysis has been completed for device operating point selection in measurement and modeling to account for self-heating and radio frequency (RF) dispersion effects. The model extraction allows for observations in parameter extraction changes that occur from growth imperfections to heating effects on the different topologies. The model extraction techniques allow for precise parameter extraction, resulting in predicted direct current (DC), scattering parameter (s-parameter), and large signal power performance verification at X-band.
Department or Program
Department of Electrical Engineering
Year Degree Awarded
Copyright 2007, all rights reserved. This open access ETD is published by Wright State University and OhioLINK.