Publication Date
2008
Document Type
Thesis
Committee Members
Jason A. Deibel (Committee Member), John G. Jones (Committee Member), Douglas T Petkie (Committee Chair), Douglas T. Petkie (Advisor)
Degree Name
Master of Science (MS)
Abstract
In this work, the effects of a post-deposition RF plasma treatment on indium tin oxide (ITO) thin films prepared with pulsed DC magnetron sputtering in argon were investigated. The parameters of the post-deposition were studied to determine what RF power and gas pressure resulted in the greatest reduction in resistivity in the films while producing the smallest increase in substrate temperature for treatments with both argon and oxygen plasmas. The as-deposited (untreated) films and the treated films were characterized using Raman spectroscopy and X-ray diffraction to determine the effects of the post-deposition treatment on the degree of film crystallization. XPS was used to analyze the chemical composition of the films' surface. SEM images were taken to observe surface features of the films. The resistivity of the films reached 1.66 * 10-5 Ω m as-deposited and 6.74*10-6 Ω m after treatment.
Page Count
57
Department or Program
Department of Physics
Year Degree Awarded
2008
Copyright
Copyright 2008, all rights reserved. This open access ETD is published by Wright State University and OhioLINK.
