Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices

Authors

John D. Busbee
Lavern A. Starman, Wright State University - Main CampusFollow
Maher S. Amer, Wright State University - Main CampusFollow
Jason C. Reber
W. D. Cowan
John F. Maguire

Document Type

Conference Proceeding

Publication Date

10-2000

Abstract

MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.

Comments

Presented at the IFAC Symposium on Artificial Intelligence in Real Time Control, Budapest, Hungary, October 2-4, 2000.

Repository Citation

Busbee, J. D., Starman, L. A., Amer, M. S., Reber, J. C., Cowan, W. D., & Maguire, J. F. (2000). Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices. Proceedings of the 2000 IFAC Symposium, 123-126.
https://corescholar.libraries.wright.edu/mme/315