On Compensation and Conductivity Models for Molecular-Beam-Epitaxial GaAs Grown at Low-Temperature

Authors

David C. Look, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

9-1-1991

Abstract

Molecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳10¹⁹ cm⁻³) concentration of As_Ga defects and, after an anneal at 550–600 °C, a high concentration of As precipitates. The relative roles of the As_Ga defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.

Comments

Copyright © 1991, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 70.6, and may be found at http://jap.aip.org/resource/1/japiau/v70/i6/p3148_s1

Repository Citation

Look, D. C. (1991). On Compensation and Conductivity Models for Molecular-Beam-Epitaxial GaAs Grown at Low-Temperature. Journal of Applied Physics, 70 (6), 3148-3151.
https://corescholar.libraries.wright.edu/physics/116

DOI

10.1063/1.349295