Microcathodoluminescence and Electron Beam Induced Current Observation of Dislocations in Freestanding Thick n-GaN Sample Grown by Hydride Vapor Phase Epitaxy

Authors

A. Y. Polyakov
A. V. Govorkov
N. B. Smirnov
Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow
Seong-Ju S. Park
J. H. Han

Document Type

Article

Publication Date

11-1-2002

Abstract

Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the cleaved surface of the samples could be associated with dislocations. MCL spectra measurements in the vicinity of dislocations and in the matrix do not reveal specific luminescence bands that could be attributed to dislocations but rather suggest that dislocation regions have higher density of deep nonradiative traps.

Comments

Copyright © 2002, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 92.9, and may be found at http://jap.aip.org/resource/1/japiau/v92/i9/p5238_s1

Repository Citation

Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Fang, Z., Look, D. C., Park, S. S., & Han, J. H. (2002). Microcathodoluminescence and Electron Beam Induced Current Observation of Dislocations in Freestanding Thick n-GaN Sample Grown by Hydride Vapor Phase Epitaxy. Journal of Applied Physics, 92 (9), 5238-5240.
https://corescholar.libraries.wright.edu/physics/150

DOI

10.1063/1.1511822