Document Type
Article
Publication Date
7-1-2011
Abstract
The spin coherence time (T2*) in ZnO single crystals at 8.5 K decreases significantly from ∼11.2 ns to ∼2.3 ns after annealing at 500 °C, as indicated by time-resolved Kerr-rotation pump-probe magneto-optical spectroscopy. The annealing-induced spin coherence degradation in ZnO arises neither from crystallinity degradation during the annealing process, as confirmed by x-ray rocking curves; nor from reflection variations of the probe laser beam induced by surface roughness changes during the annealing process, as confirmed by atomic force microscopy. Temperature-dependent Hall-effect studies indicate that decreased mobility and increased shallow-donor concentration in the annealing-induced surface conducting layer on top of the bulk ZnO are most likely to be the reasons for the spin coherence degradation in ZnO during the annealing process.
Repository Citation
Yang, Z.,
Look, D. C.,
Zhou, H. M.,
Kawakami, W. V.,
Kawakami, R. K.,
Yu, P. K.,
& Liu, J. L.
(2011). Thermal Annealing Effect on Spin Coherence in ZnO Single Crystals. Journal of Applied Physics, 110 (1), 16101.
https://corescholar.libraries.wright.edu/physics/168
DOI
10.1063/1.3601869
Comments
Copyright © 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 110.1, and may be found at http://jap.aip.org/resource/1/japiau/v110/i1/p016101_s1