Recombination of 2-Dimensional Electrons with Free Light and Heavy Holes in Alxga1-Xas-GaAs Single Heterojunctions in a Magnetic-Field

Authors

D. C. ReynoldsFollow
David C. Look, Wright State University - Main CampusFollow
B. Jogai
C. E. Stutz

Document Type

Article

Publication Date

12-1-1993

Abstract

Landau-level oscillations are observed in the photoluminescence from an Al_xGa_1-xAs-GaAs single heterojunction in an applied magnetic field. Extrapolating the oscillations back to zero field gives the energy of the transition from the two-dimensional (2D) electrons to the free heavy holes (hh1 and hh2) and free light holes (lh) weakly confined in the GaAs active layer. The measured energy separation between hh1 and lh is 1.8 meV, which agrees very well with the calculated value of 2.2 meV. The measured energy separation between hh1 and hh2 is 3.8 meV, in good agreement with the calculated value of 4.4 meV. The 2D electron effective mass was determined to be m_e^*=0.086m. The light-hole effective mass was determined to be m_lh^*=0.078m, using the GaAs heavy-hole effective mass m_hh1^*=0.46m as input. The effective mass m_hh2^* is approximately the same as m_hh1^*.

Comments

The original publication is available at http://prb.aps.org/abstract/PRB/v48/i23/p17168_1

Repository Citation

Reynolds, D. C., Look, D. C., Jogai, B., & Stutz, C. E. (1993). Recombination of 2-Dimensional Electrons with Free Light and Heavy Holes in Alxga1-Xas-GaAs Single Heterojunctions in a Magnetic-Field. Physical Review B, 48 (23), 17168-17171.
https://corescholar.libraries.wright.edu/physics/192

DOI

10.1103/PhysRevB.48.17168