Document Type
Article
Publication Date
2-1-1999
Abstract
A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions.
Repository Citation
Look, D. C.,
& Sizelove, J. R.
(1999). Dislocation Scattering in GaN. Physical Review Letters, 82 (6), 1237-1240.
https://corescholar.libraries.wright.edu/physics/215
DOI
10.1103/PhysRevLett.82.1237
Comments
The original publication is available at http://prl.aps.org/abstract/PRL/v82/i6/p1237_1