Residual Native Shallow Donor in ZnO

Authors

David C. Look, Wright State University - Main CampusFollow
Joseph W. Hemsky, Wright State University - Main CampusFollow
J. R. Sizelove

Document Type

Article

Publication Date

3-1-1999

Abstract

High-energy electron irradiation in ZnO produces shallow donors at about E_C-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial Zn_I or a Zn_I-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that Zn_I (and not V_O) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a multiple-displacement model.

Comments

The original publication is available at http://prl.aps.org/abstract/PRL/v82/i12/p2552_1

Repository Citation

Look, D. C., Hemsky, J. W., & Sizelove, J. R. (1999). Residual Native Shallow Donor in ZnO. Physical Review Letters, 82 (12), 2552-2555.
https://corescholar.libraries.wright.edu/physics/216

DOI

10.1103/PhysRevLett.82.2552