P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications
Document Type
Article
Publication Date
6-2005
Abstract
ZnO has distinct advantages over competing technologies such as GaN. Two advantages are the inherent improvement in ultraviolet (UV) brightness, necessary for the biological sensor application where the signal-to-noise ratio (SNR) is enhanced by a bright UV source, and the second is the availability of ZnO lattice-matched substrates, which will result in lower defect densities than GaN, higher manufacturing yield, and then lower cost. The ZnO material system’s advantage in exciton binding energy of 60 MeV, a three-time improvement over GaN, will result in UV emitters with superior performance.
Repository Citation
Egerton, E. J.,
Sood, A. K.,
Singh, R.,
Puri, Y. R.,
Davis, R. F.,
Pierce, J.,
Look, D. C.,
& Steiner, T.
(2005). P-Type Doping Utilizing Nitrogen and Mn Doping of ZnO Using MOCVD for Ultraviolet Lasers and Spintronic Applications. Journal of Electronic Materials, 34 (6), 949-952.
https://corescholar.libraries.wright.edu/physics/275
DOI
10.1007/s11664-005-0048-y
Comments
A correction to this article was published in the Journal of Electronic Materials, Volume 34, Issue 8, August 2005, p. 1183, DOI: 10.1007/s11664-005-0249-4. Two of the original authors, Robert F. Davis and Jon Pierce, were omitted.