Investigation of the Interface Properties of MOVPE Grown AlGaN/GaN High Electron Mobility Transistor (HEMT) Structures On Sapphire
Document Type
Article
Publication Date
2006
Abstract
We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility. (c) 2006 Elsevier B.V. All rights reserved.
Repository Citation
Aggerstam, T.,
Lourdudoss, S.,
Radamson, H. H.,
Sjodin, M.,
Lorenzini, P.,
& Look, D. C.
(2006). Investigation of the Interface Properties of MOVPE Grown AlGaN/GaN High Electron Mobility Transistor (HEMT) Structures On Sapphire. Thin Solid Films, 515 (2), 705-707.
https://corescholar.libraries.wright.edu/physics/321
DOI
10.1016/j.tsf.2006.04.052
