Point Defect Characterization of GaN and ZnO
Document Type
Article
Publication Date
1999
Abstract
Point defects are created in bulk ZnO and epitaxial GaN by 1-2 MeV electron irradiation at 300 K, and are studied by temperature-dependent Hall effect, photoluminescence, and deep level transient spectroscopy measurements. The N vacancy is identified as a fairly shallow donor in GaN, whereas defect identifications in ZnO are uncertain at this time. Both materials, but especially ZnO, are quite resistant to displacement damage. (C) 1999 Elsevier Science S.A. All rights reserved.
Repository Citation
Look, D. C.,
Fang, Z.,
Hemsky, J.,
Sizelove, J. R.,
& Jones, R. L.
(1999). Point Defect Characterization of GaN and ZnO. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 66 (1-3), 30-32.
https://corescholar.libraries.wright.edu/physics/324
DOI
10.1016/S0921-5107(99)00115-4
