Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN
Lattice-mismatched epitaxy produces a high concentration of dislocations (N-dis) in the interface region, and this region is often highly conductive, due to donor (N-D) decoration of the dislocations. Here we show that a simple postulate, N-D = alpha (N-dis/c), where c is the lattice constant and alpha a constant of order 1-2, predicts a nearly constant low-temperature mobility, independent of N-dis This prediction is experimentally verified in GaN grown on Al2O3, and is also applied to other mismatched systems. (C) 2001 Elsevier Science Ltd. All rights reserved.
Look, D. C.,
Stutz, C. E.,
Molnar, R. J.,
& Liliental-Weber, Z.
(2001). Dislocation-independent Mobility in Lattice-Mismatched Epitaxy: Application To GaN. Solid State Communications, 117 (10), 571-575.