Rapid thermally annealed silicon‐implanted x‐cut α‐quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites are preferentially oriented and under substantial stress.
Ramabadran, U. B.,
Jackson, H. E.,
& Farlow, G. C.
(1989). Silicon Crystallite formation in Ion-Implanted Quartz. Applied Physics Letters, 55 (12), 1199-1201.