Crystal Field Splitting of Defect Pair Spectra in GaAs
Document Type
Article
Publication Date
4-1997
Abstract
We report three photoluminescent lines in the 1.504-1.507 eV range in GaAs, associated with excitons bound to defect pairs. The lines are all split by crystal field interaction introduced by uniaxial stress. The highest energy line is strongly polarized in the [110] direction. The polarization selection rules are relaxed by an applied magnetic field clearly demonstrating the crystal field splitting. (C) 1997 Published by Elsevier Science Ltd.
Repository Citation
Reynolds, D. C.,
Look, D. C.,
Jogai, B.,
Kaspi, R.,
& Evans, K. R.
(1997). Crystal Field Splitting of Defect Pair Spectra in GaAs. Solid State Communications, 102 (1), 47-51.
https://corescholar.libraries.wright.edu/physics/351
DOI
10.1016/S0038-1098(96)00786-7
