Title

Infrared Transmission Topography for Whole-Wafer Gallium-Arsenide Materials Characterization

Document Type

Article

Publication Date

3-1992

Abstract

Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half-millimeter resolution plots of EL2 density and dislocation density are shown to correlate with plots of saturation current in MESFET devices at an early stage of fabrication.

DOI

10.1016/0038-1101(92)90235-5