Effects of A Buffer Layer on Free-Carrier Depletion in N-Type GaAs
Document Type
Article
Publication Date
6-1991
Abstract
Poisson's equation is solved in the depletion approximation to give an expression for the sheet free-carrier charge transferred from a conductive semiconductor layer to acceptor (or donor) states at interfaces or in the bulk material. The principal goal of the paper is to show that a relatively thin, undoped buffer layer between the substrate and active layer can dramatically lower the free-carrier loss to substrate interface states. Data on molecular-beam epitaxial, n-type GaAs agree well with the theory, but show that there still is some loss at the interface between the active layer and buffer layer.
Repository Citation
Look C.,
Evans, K. R.,
& Stutz, C. E.
(1991). Effects of A Buffer Layer on Free-Carrier Depletion in N-Type GaAs. IEEE Transactions on Electron Devices, 38 (6), 1280-1284.
https://corescholar.libraries.wright.edu/physics/377
DOI
10.1109/16.81617
