The Path To ZnO Devices: Donor and Acceptor Dynamics
Document Type
Article
Publication Date
2003
Abstract
Hall-effect, photoluminescence (PL), and electron paramagnetic resonance (EPR) measurements have been performed in single-crystal ZnO samples annealed in air at 25, 550, 750, and 950 degreesC, for 30 min each. A 37 meV donor is dominant in the unannealed sample, but nearly disappears during the higher temperature anneals, and is replaced by a 67 meV donor. The 37 meV donor is responsible for a donor-bound-exciton PL line at (3.3631 +/- 0.0002) eV, which is dominant in the unannealed sample. The EPR measurements show that N-O centers appear in the 750 degreesC and 950 degreesC anneals, and they are probably responsible for an increase in the acceptor concentration found from the Hall-effect results. A PL emission at (3.3570 +/- 0.0002) eV, assigned in the literature as an acceptor-bound exciton, may involve N-O complexes.
Repository Citation
Look, D. C.,
Jones, R. L.,
Sizelove, J. R.,
Garces, N. Y.,
Giles, N. C.,
& Halliburton, L. E.
(2003). The Path To ZnO Devices: Donor and Acceptor Dynamics. Physica Status Solidi A-Applied Research, 195 (1), 171-177.
https://corescholar.libraries.wright.edu/physics/417
DOI
10.1002/pssa.200306274
