Document Type
Article
Publication Date
9-1-1992
Abstract
We have observed IR photoquenching of the hopping conduction in GaAs samples grown by molecular beam epitaxy at the low temperature of 250 °C and annealed at temperatures from 300 to 600 °C. A key element in the success of this study is removal of the layers from their substrates. The hopping conduction recovers at about 140 K, with a thermal activation energy of about 0.3 eV.
Repository Citation
Fang, Z.,
& Look, D. C.
(1992). Photoquenching of Hopping Conduction in Low-Temperature-Grown Molecular-Beam-Epitaxial GaAs. Applied Physics Letters, 61 (12), 1438-1440.
https://corescholar.libraries.wright.edu/physics/42
DOI
10.1063/1.107562
Comments
Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 61.12, and may be found at http://apl.aip.org/resource/1/applab/v61/i12/p1438_s1