Title

Radiation Hardness of ZnO at Low Temperatures

Document Type

Article

Publication Date

6-2004

Abstract

In situ Hall-effect measurements have been carried out on vapour-phase-grown, n-type ZnO irradiated with 1.0 and 1.5 MeV electrons in the [000-1] direction. The electrical properties change very little during irradiation at temperatures as low as 130 K, the lowest temperature presently attainable under 1 MeV, 0.3 muA cm(-2) irradiation. It is concluded that long-term damage in ZnO is limited by defect annihilations that are rapid on the time scale of the experiment (min), even at 130 K.

DOI

10.1088/0268-1242/19/6/016