Title

Screening of Excitons in GaN Crystals

Document Type

Article

Publication Date

1998

Abstract

A study was made of the screening of excitons in a GaN sample, which was simultaneously excited with a HeCd laser and an Ar+ ion laser. The Ar+ ion laser excites carriers in a two step process, involving an impurity or defect. A comparison with transport measurements shows that the photoluminescence is probably emitted from a higher-quality portion of the sample than that which conducts the current.

DOI

10.1088/0953-8984/10/25/009