The Future Of ZnO Light Emitters
Document Type
Article
Publication Date
8-2004
Abstract
Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters are p-n junctions, and p-type ZnO is difficult to make. Thus, the future of ZnO light emitters depends on either producing low-resistivity p-type ZnO, or in mating n-type ZnO with a p-type hole injector. Perhaps the best device so far involves an n-ZnO/p-AlGaN/n-SiC structure, which produces intense 390 +/- 1 nm emission at both 300 K and 500 K. However, development of p-ZnO is proceeding at a rapid pace, and a p-n homojunction should be available soon.
Repository Citation
Look, D. C.,
Claflin, B.,
Alivov, Y. I.,
& Park, S.
(2004). The Future Of ZnO Light Emitters. Physica Status Solidi A-Applications and Materials Science, 201 (10), 2203-2212.
https://corescholar.libraries.wright.edu/physics/457
DOI
10.1002/pssa.200404803
