Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors
Document Type
Article
Publication Date
1997
Find this in a Library
Abstract
We present for the first time results on charging effects in fully fabricated pseudomorphic high electron mobility transistors (PHEMTs), using in-situ, photoemission and conduction (PEC) studies. The experiments were performed on GaAs based FETs with strained InGaAs channels. These studies evaluate hole storage in the channel area which modifies the threshold voltage of the field effect transistors (FETs). Deep level transient spectroscopy (DLTS) measurements were performed and the results compared to the data obtain from the photo studies. Understanding of hole storage is of significance in modeling the devices since holes are attracted towards the channel when the device is pinched off.
Repository Citation
Schuermeyer, F. L.,
Cerny, C.,
Bozada, C. A.,
Fang, Z.,
& Look, D. C.
(1997). Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 36, 1330-1334.
https://corescholar.libraries.wright.edu/physics/458
DOI
10.1143/JJAP.36.1330
