Title

Charge Storage Effects in Pseudomorphic High Electron Mobility Transistors

Document Type

Article

Publication Date

1997

Find this in a Library

Catalog Record

Abstract

We present for the first time results on charging effects in fully fabricated pseudomorphic high electron mobility transistors (PHEMTs), using in-situ, photoemission and conduction (PEC) studies. The experiments were performed on GaAs based FETs with strained InGaAs channels. These studies evaluate hole storage in the channel area which modifies the threshold voltage of the field effect transistors (FETs). Deep level transient spectroscopy (DLTS) measurements were performed and the results compared to the data obtain from the photo studies. Understanding of hole storage is of significance in modeling the devices since holes are attracted towards the channel when the device is pinched off.

DOI

10.1143/JJAP.36.1330

Catalog Record

Share

COinS