The first Hall‐effect measurements on molecular beam epitaxial GaAs layers grown at the low temperatures of 300 and 400 °C are reported. Two independent methods were used to determine donor ND and acceptor NA concentrations and activation energy ED0, with the following combined results: ND≂3±1×1018, NA≂1.5±1×1017 cm−3, and ED0=0.645±0.009 eV for the 300 °C layer; ND≂2±1×1017, NA≂7±3×1016 cm−3, and ED0=0.648±0.003 eV for the 400 °C layer. Thus, the deep donor is not the expected EL2, which has ED0=0.75±0.01 eV.
Look, D. C.,
Robinson, G. D.,
Sizelove, J. R.,
& Stutz, C. E.
(1993). Donor and Acceptor Concentrations in Molecular-Beam Epitaxial GaAs Grown at 300-Degrees-C and 400-Degrees-C. Applied Physics Letters, 62 (23), 3004-3006.