Both multistep wafer‐annealed (MWA) and ingot‐annealed semi‐insulating (SI) GaAs wafers, grown by the Czochralski technique, are characterized by using normalized thermally stimulated current (NTSC) spectroscopy. Two main NTSC traps, T3 at 200 K and T5 at 140 K, which are thought to be related to arsenic vacancy defects, are found to be largely suppressed by MWA processes, especially by a new MWA process. Concomitant with a decrease of these traps, a significant increase of the threshold electrical field for both the thermal quenching of T5 and the low‐temperature photocurrent saturation has been observed
Look, D. C.,
& Shimakura, H.
(1996). Effect of Multistep Wafer-Annealing on Main Traps in Czochralski-Grown Semi-Insulating GaAs. Applied Physics Letters, 69 (22), 3417-3419.