Thermally Stimulated Current Trap in GaN

Authors

David C. Look, Wright State University - Main CampusFollow
Z-Q. FangFollow
W. KimFollow
Ö. AktasFollow
A. BotchkarevFollow
A. SalvadorFollow
H. MorkoçFollow

Document Type

Article

Publication Date

6-1-1996

Abstract

A thermally stimulated current peak, occurring at 100 K for a heating rate of 0.4 K/s, has been found in semi‐insulating GaN grown by molecular beam epitaxy. This peak has contributions from two traps, with the main trap described by the following parameters: emission thermal activation energy E≂90±2 meV, effective capture cross‐section σ≂3±1×10⁻²² cm⁻², and Nμτ≂3±1 × 10¹⁴ cm⁻¹ V ⁻¹, where N is the trap concentration, μ the mobility, and τ the free‐carrier lifetime. This trap is much deeper than the typical shallow donors in conducting GaN, but shallower than any of the centers reported in recent deep level transient spectroscopy measurements.

Comments

Copyright © 1996, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 68.26, and may be found at http://apl.aip.org/resource/1/applab/v68/i26/p3775_s1

Repository Citation

Look, D. C., Fang, Z., Kim, W., Aktas, Ö., Botchkarev, A., Salvador, A., & Morkoç, H. (1996). Thermally Stimulated Current Trap in GaN. Applied Physics Letters, 68 (26), 3775-3777.
https://corescholar.libraries.wright.edu/physics/56

DOI

10.1063/1.116613