Deep Centers in N-GaN Grown by Reactive Molecular Beam Epitaxy

Authors

Z-Q. FangFollow
David C. Look, Wright State University - Main CampusFollow
W. KimFollow
Z. Fan
A. BotchkarevFollow
H. MorkoçFollow

Document Type

Article

Publication Date

5-1-1998

Abstract

Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n⁺-GaN contact layer at 800 °C show a dominant trap C₁ with activation energy E_T = 0.44 eV and capture cross-section σ_T = 1.3×10⁻¹⁵ cm⁻², while samples grown at 750 °C on an undoped semi-insulating GaN buffer show prominent traps D₁ and E₁, with E_T = 0.20 eV and σ_T = 8.4×10⁻¹⁷ cm², and E_T = 0.21 eV and σ_T = 1.6×10⁻¹⁴ cm², respectively. Trap E₁ is believed to be related to a N-vacancy defect, since the Arrhenius signature for E₁ is very similar to the previously reported trap E, which is produced by 1-MeV electron irradiation in GaN materials grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy.

Comments

Copyright © 1998, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 72.18, and may be found at http://apl.aip.org/resource/1/applab/v72/i18/p2277_s1

Repository Citation

Fang, Z., Look, D. C., Kim, W., Fan, Z., Botchkarev, A., & Morkoç, H. (1998). Deep Centers in N-GaN Grown by Reactive Molecular Beam Epitaxy. Applied Physics Letters, 72 (18), 2277-2279.
https://corescholar.libraries.wright.edu/physics/59

DOI

10.1063/1.121274