Properties of Aℓ and P Ion-Implanted Layers in ZnSe

Authors

Y. S. Park
B. K. Shin
David C. Look, Wright State University - Main CampusFollow
D. L. Downing

Document Type

Conference Proceeding

Publication Date

1975

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Abstract

Low-resistivity n- and p-type layers have been produced in ZnSe by room-temperature Aℓ and P implantation, respectively, and subsequent annealing. The layers have been characterized by electrical and photoluminescence measurements as functions of ion energy and dose, and annealing time and temperature.

Comments

Presented at the 4th International Conference on Ion Implantation in Semiconductors and Other Materials, held at the Osaka Chamber of Commerce and Industry, Osaka, Japan.

Repository Citation

Park, Y. S., Shin, B. K., Look, D. C., & Downing, D. L. (1975). Properties of Aℓ and P Ion-Implanted Layers in ZnSe. Ion Implantation in Semiconductors: Science and Technology, 245-252.
https://corescholar.libraries.wright.edu/physics/617

DOI

10.1007/978-1-4684-2151-4_31