Title

Novel Ga/AsCl3/H2 Reactor For Controlling Stoichiometry In The Growth Of Vapor Phase Epitaxy (VPE) GaAs

Document Type

Conference Proceeding

Publication Date

9-15-1982

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Abstract

An AsCl3 vapor phase epitaxial reactor has been constructed which is capable of operation with a variable controlled Ga/As ratio. Layers grown in this reactor have been characterized by photoluminescence, electrical and DLTS measurements. Results to date indicate differing influence of the Ga/As gas phase ratio on <100> and <211A> orientation layers, particularly on deep level incorporation.

Comments

Presented at the Proceedings of SPIE: Semiconductor Growth Technology, Los Angeles, CA.

© (1982) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

DOI

10.1117/12.934272