Study and Characterization of Low-Pressure AsH₃ Cracking Cells in Gas Source MBE: Growth of GaAs and AlGaAs Epitaxy

Authors

Cole W. Litton
L. Kapitan
Phil W. Yu
David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

4-20-1987

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Abstract

MBE growth of GaAs and AlGaAs layers with good surface morphology and reasonably good PL spectral response has been achieved using two versions of a low-pressure, Calawa-type AsH3 cracker (long-quartz-tube containing a filamentary Ta catalyst) which produced predominately As4 and As2 and smaller concentrations of As1 for the MBE growth. Quadruple mass analyzer measurements of the cracking patterns and the As4, As2, and As1 molecular species produced by the gas cracking furnaces are also reported.

Comments

Presented at the Proceedings of SPIE: Growth of Compound Semiconductors, Bay Point, FL.

© (1987) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Repository Citation

Litton, C. W., Kapitan, L., Yu, P. W., & Look, D. C. (1987). Study and Characterization of Low-Pressure AsH₃ Cracking Cells in Gas Source MBE: Growth of GaAs and AlGaAs Epitaxy. Proceedings of SPIE, 796, 32-39.
https://corescholar.libraries.wright.edu/physics/646

DOI

10.1117/12.940993