Identification of the 0.15 eV Donor Defect in Bulk GaAs

Authors

Z-Q. Fang
Joseph Hemsky, Wright State University - Main CampusFollow
David C. Look, Wright State University - Main CampusFollow

Document Type

Conference Proceeding

Publication Date

1994

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Abstract

The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

Comments

Presented at the 1993 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 1994.

Repository Citation

Fang, Z., Hemsky, J., & Look, D. C. (1994). Identification of the 0.15 eV Donor Defect in Bulk GaAs. MRS Proceedings, 325, 431.
https://corescholar.libraries.wright.edu/physics/677

DOI

10.1557/PROC-322-431