Evolution of Deep Centers in GaN Grown by Hydride Vapor Phase Epitaxy

Authors

Z-Q. Fang
David C. Look, Wright State University - Main CampusFollow
J. Jasinski
M. Benamara
Z. Liliental-Weber
Richard J. Molnar

Document Type

Article

Publication Date

1-1-2001

Abstract

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron-irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

Comments

Copyright © 2001, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 78.3, and may be found at http://apl.aip.org/resource/1/applab/v78/i3/p332_s1

Repository Citation

Fang, Z., Look, D. C., Jasinski, J., Benamara, M., Liliental-Weber, Z., & Molnar, R. J. (2001). Evolution of Deep Centers in GaN Grown by Hydride Vapor Phase Epitaxy. Applied Physics Letters, 78 (3), 332-334.
https://corescholar.libraries.wright.edu/physics/69

DOI

10.1063/1.1338970