Title

Direct Observation of Bulk and Interface States in GaN on Sapphire Grown by Hydride Vapor Phase Epitaxy

Document Type

Conference Proceeding

Publication Date

10-2001

Find this in a Library

Catalog Record

Abstract

We have used an ultrahigh vacuum scanning electron microscope to carry out cross sectional secondary electron imaging, cathodoluminescence spectroscopy, and cathodoluminescence imaging on GaN grown on sapphire by hydride vapor phase epitaxy. These measurements provide evidence for deep level defects highly localized at the GaN, sapphire interface as well as defects extending into both the semiconductor film and the substrate. The different spatial distributions of these radiative defects provide information on the physical origin of these electrically active features.

Comments

Presented at the 2000 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 2001.

DOI

10.1557/PROC-639-G3.59

Catalog Record

Share

COinS