Title

Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

Document Type

Conference Proceeding

Publication Date

7-2003

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Abstract

In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.

Comments

Presented at the 2003 MRS Spring Meeting, San Francisco, CA.

Copyright © Materials Research Society 2003.

DOI

10.1557/PROC-764-C4.2

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