ZnO/AlGaN Ultraviolet Light Emitting Diodes

Authors

D. M. BagnallFollow
Ya I. AlivovFollow
E. V. KalininaFollow
David C. Look, Wright State University - Main CampusFollow
B. M. AtaevFollow
M. V. ChukichevFollow
A. E. CherenkovFollow
A. K. OmaevFollow

Document Type

Conference Proceeding

Publication Date

4-2004

Find this in a Library

Catalog Record

Abstract

Ga doped n-type ZnO layers are grown using plasma assisted chemical vapor deposition on Mg doped p-type AlGaN epitaxial layers grown by hydride vapor phase epitaxy to form n-ZnO/p-AlGaN heterojunction light emitting diodes. I-V characteristics clearly show rectifying behavior with a threshold voltage of ∼3.2 V and intense ultraviolet electroluminescence with peak emission at 390 nm. The dominant emission mechanism is found to result from hole injection from the p-type AlGaN into the n-type ZnO. Significant emission up to 500 K is observed indicating possible applications in harsh environments.

Comments

Presented at the 2003 MRS Fall Meeting, Boston, MA.

Copyright © Materials Research Society 2004.

Repository Citation

Bagnall, D. M., Alivov, Y. I., Kalinina, E. V., Look, D. C., Ataev, B. M., Chukichev, M. V., Cherenkov, A. E., & Omaev, A. K. (2004). ZnO/AlGaN Ultraviolet Light Emitting Diodes. MRS Proceedings, 798, 41.
https://corescholar.libraries.wright.edu/physics/716

DOI

10.1557/PROC-798-Y3.9