Document Type
Article
Publication Date
10-1-2003
Abstract
In this work, we report on the growth, fabrication, and device characterization of wide-band-gap heterojunction light-emitting diodes based on the n-ZnO/p-GaN material system. The layer structure is achieved by first growing a Mg-doped GaN film of thickness 1 μm on Al2O3(0001) by molecular-beam epitaxy, then by growing Ga-doped ZnO film of thickness 1 μm by chemical vapor deposition on the p-GaN layer. Room-temperature electroluminescence in the blue-violet region with peak wavelength 430 nm is observed from this structure under forward bias. Light–current characteristics of these light-emitting diodes are reported, and a superlinear behavior in the low current range with a slope 1.9 and a sublinear behavior with a slope 0.85 in the high current range are observed.
Repository Citation
Alivov, Y. I.,
Van Nostrand, J. E.,
Look, D. C.,
Chukichev, M. V.,
& Ataev, B. M.
(2003). Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes. Applied Physics Letters, 83 (14), 2943-2945.
https://corescholar.libraries.wright.edu/physics/83
DOI
10.1063/1.1615308
Comments
Copyright © 2003, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 83.14, and may be found at http://apl.aip.org/resource/1/applab/v83/i14/p2943_s1