Marian Kazimierczuk (Advisor), Michael Saville (Committee Member), Yan Zhuang (Committee Member)
Master of Science in Electrical Engineering (MSEE)
In this thesis, the various kinds of Class-F radio frequency power amplifiers are discussed. The Class-F3 RFPA is the one which has been designed and analyzed. It consists of an RF choke, blocking capacitor and a loading network. The loading network consists of a tank circuit resonating at fundamental operating frequency and also a parallel resonator circuit tuned to third harmonic. For a better understanding of the operation of Class-F3 amplifier, we go back to Class-C amplifier and discuss it briefly. Here the design remains same, operating at conduction angles less than 180 degree. The design equations were used to derive required circuit parameters on MATLAB. The designed circuit is implemented on SABER circuit simulator and resulting waveforms and frequency spectrums are also presented. The dependence of Class-F3 operation on gate-to-source voltage of a MOSFET is presented by varying it and showing the changes in the drain-to-source voltage and drain current. The frequency spectrum helps understand the harmonics in both signals. A design of the Class-F3 RFPA is presented with drain-source capacitance. A design for Class-F3 amplifier was produced where the MOSFET is forced to work in linear operating region and it is simulated in SABER. The plotted SABER simulation results are in agreement with the theoretically derived results. The simulated circuit efficiencies are a little less than what was calculated theoretically. The spectrums help clarify the results obtained.
Department or Program
Department of Electrical Engineering
Year Degree Awarded
Copyright 2016, all rights reserved. My ETD will be available under the "Fair Use" terms of copyright law.