Hamed Attariani, Ph.D. (Advisor); James Menart, Ph.D. (Committee Member); Weisong Wang, Ph.D. (Committee Member)
Master of Science in Mechanical Engineering (MSME)
β-Ga2O3 is a robust semiconductor material set with a large band gap of ~4.8 eV, low intrinsic carrier concentration, and high melting point that offers a stable platform for operating electronic devices at high temperatures and extreme environments. The first half of this thesis will cover the fabrication of a fixture and packaging to test electronic components at high temperatures. Then it will highlight the characterization of β-Ga2O3 field effect transistors from room temperature (RT) up to 500 °C. The devices, fabricated with Ni/Au and Al2O3 gate metal-oxide-semiconductor (MOS), demonstrate stable operation up to 500 oC. The tested device shows no measured current degradation in the ID-VD characteristics up to 450 oC. Improvements to the drain current, ID within this temperature range are due to activation carriers from dopants/traps and the negative push in threshold voltage, VT. The device exhibits a drop in ID at 500 °C; however, device characteristics recover once the device returns to RT. Even after 20 hours of device operation at 500 °C, the device shows negligible degradation. Device characteristics such as gate leakage, ION/IOFF ratio, gm, Ron, and contact resistance show monotonic variation with temperature. The experimental results suggest that an optimized choice of metals and gate dielectrics β-Ga2O3 will provide a platform for device operation at high temperatures and extreme environments. The second half of the thesis focuses on creating an electrostatic model of a metal-oxide-semiconductor field effect transistor with COMSOL finite element analysis software to understand the physics behind semiconductor technology.
Department or Program
Department of Mechanical and Materials Engineering
Year Degree Awarded
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