Modeling and Analysis for Laser Beam Induced Current Images in Semiconductors

Authors

Weifu Fang, Wright State University - Main CampusFollow
Stavros Busenberg
Kazufumi Ito

Document Type

Article

Publication Date

2-1-1993

Abstract

A mathematical model is developed for the new nondestructive optical technique called laser-beam-induced currents (LBIC), which can be used to detect electrically active regions and defects in semiconductors. The wellposedness of the model equations is shown, and an approximate model that simplifies the numerical implementation of the identification problem is obtained. Some numerical results are presented to show that the approximate model preserves the significant features that the LBIC technique has been experimentally shown to possess.

Comments

This work is licensed under a Creative Commons Attribution 4.0 International License.

Repository Citation

Fang, W., Busenberg, S., & Ito, K. (1993). Modeling and Analysis for Laser Beam Induced Current Images in Semiconductors. SIAM Journal on Applied Mathematics, 53 (1), 187-204.
https://corescholar.libraries.wright.edu/math/458

DOI

10.1137/0153012