Identifiability of Semiconductor Defects From LBIC Images

Authors

Weifu Fang, Wright State University - Main CampusFollow
Kazufumi Ito

Document Type

Article

Publication Date

12-1-1992

Abstract

The identifiability of defects in a semiconductor from its laser-beam-induced current (LBIC) image is studied. It is shown that the LBIC technique is reliable for detecting any spatial defects in the semiconductor material. Continuous dependence of the current measurements on the spatial defects is proved, and sensitivity is also discussed in certain cases.

Comments

This work is licensed under a Creative Commons Attribution 4.0 International License.

Repository Citation

Fang, W., & Ito, K. (1992). Identifiability of Semiconductor Defects From LBIC Images. SIAM Journal on Applied Mathematics, 52 (6), 1611-1626.
https://corescholar.libraries.wright.edu/math/460

DOI

10.1137/0152093