The identifiability of defects in a semiconductor from its laser-beam-induced current (LBIC) image is studied. It is shown that the LBIC technique is reliable for detecting any spatial defects in the semiconductor material. Continuous dependence of the current measurements on the spatial defects is proved, and sensitivity is also discussed in certain cases.
& Ito, K.
(1992). Identifiability of Semiconductor Defects From LBIC Images. SIAM Journal on Applied Mathematics, 52 (6), 1611-1626.
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