Utilizing Raman Spectroscopy for Stress Imaging in Mems Devices

Document Type

Conference Proceeding

Publication Date



MEMS devices are becoming a pervasive part of today's technology world. Currently, MEMS designers have to take residual stresses into account when designing mircrodevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters.


Presented at the IFAC Symposium on Artificial Intelligence in Real Time Control, Budapest, Hungary, October 2-4, 2000.