A Simple Model for Impurity Photoabsorption in Silicon

Authors

Gust Bambakidis, Wright State University - Main CampusFollow

Document Type

Article

Publication Date

6-1-1984

Abstract

A simple model for absorption of infrared radiation by impurity atoms in silicon crystals has been developed and applied to electronic excitations ofthe Group V donors Bi, Sb, As, and P, and the Group III acceptors B, AI, Ga, and In. The model is based on the quantum-defect method for approximating bound donor or acceptor wave functions outside the core region of the impurity. For each donor species, the relative oscillator strengths have been calculated for the transitions from the ground state to the first four excited levels. For each acceptor species, the relative oscillator strengths were calculated for transitions from the P_3/2 ground state to the first three P_1/2 excited levels. Comparison with high-resolution absorption spectra show qualitative agreement for the low-lying transitions.

Comments

Copyright © 1984, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 55.12, and may be found at http://jap.aip.org/resource/1/japiau/v55/i12/p4373_s1

Repository Citation

Bambakidis, G. (1984). A Simple Model for Impurity Photoabsorption in Silicon. Journal of Applied Physics, 55 (12), 4373-4375.
https://corescholar.libraries.wright.edu/physics/105

DOI

10.1063/1.333006