THz Performance of 1550-Nm-Driven Photoconductive Switches Made From Gaas:ER With Eras Quantum Dots
Ultrafast 1550-nm extrinsic photoconductivity in GaAs:Er makes it possible to fabricate THz photoconductive devices having performance comparable to GaAs:Er devices based on traditional 780-nm intrinsic photoconductivity. This paper addresses the effect of Er doping concentration and its associated ErAs quantum-dot formation on THz device performance, focusing on photoconductive switches.
& Brown, E.
(2018). THz Performance of 1550-Nm-Driven Photoconductive Switches Made From Gaas:ER With Eras Quantum Dots. Proceedings of the IEEE National Aerospace Electronics Conference, NAECON, 332-334.