431 Ka/CM2 Peak Tunneling Current Density in GaN/Aln Resonant Tunneling Diodes
We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-Transport solver was used to model and optimize designs with high levels of doping and ultra-Thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-To-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370-385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.
& Berger, P.
(2018). 431 Ka/CM2 Peak Tunneling Current Density in GaN/Aln Resonant Tunneling Diodes. Applied Physics Letters, 112, 033508.