Title

Model for Ultrafast Extrinsic Photoconductivity in Er-Doped GaAs

Document Type

Conference Proceeding

Publication Date

11-28-2016

Abstract

A model is constructed for extrinsic photoconductivity in GaAs heavily doped with Er and driven around 1550 nm. The model is based on internal photoionization of ErAs nanoparticles in the diameter range 2.0 to 2.5 nm, which occurs via a resonant, bound-to-continuum electron transition between the Γ-point in the atomic-like ErAs and the Γ-valley in the GaAs. The model is consistent with all experimental evidence to date, including sub-band absorption, photo-Hall measurements, 1550-nm pump-probe photocarrier lifetime, and THz power generation.

DOI

10.1109/IRMMW-THz.2016.7758557

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