Model for Ultrafast Extrinsic Photoconductivity in Er-Doped GaAs
Document Type
Conference Proceeding
Publication Date
11-28-2016
Abstract
A model is constructed for extrinsic photoconductivity in GaAs heavily doped with Er and driven around 1550 nm. The model is based on internal photoionization of ErAs nanoparticles in the diameter range 2.0 to 2.5 nm, which occurs via a resonant, bound-to-continuum electron transition between the Γ-point in the atomic-like ErAs and the Γ-valley in the GaAs. The model is consistent with all experimental evidence to date, including sub-band absorption, photo-Hall measurements, 1550-nm pump-probe photocarrier lifetime, and THz power generation.
Repository Citation
Brown, E.,
Zhang, W.,
Feldman, A.,
Harvey, T.,
& Mirin, R.
(2016). Model for Ultrafast Extrinsic Photoconductivity in Er-Doped GaAs. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz.
https://corescholar.libraries.wright.edu/physics/1095
DOI
10.1109/IRMMW-THz.2016.7758557
