Terahertz Photomixing in Low-Temperature-Grown GaAs
Document Type
Article
Publication Date
1-1-1997
Identifier/URL
40221831 (Pure); 0031361604 (QABO)
Abstract
The photomixer is a compact solid-state source consisting of two single-frequency tunable diode lasers that generate a THz difference frequency by photoconductive mixing in low-temperature-grown (LTG) GaAs. Two inherent advantages of the photomixer are: it is not limited by the Manley-Rowe relation, as three wave mixers; and it is not affected by idler frequencies, as electronic multipliers. The LTG GaAs photomixer is fabricated on a Si substrate to take advantage of the 3× higher thermal conductivity of Si compared to GaAs. To overcome the RC rolloff, the photomixers are coupled to resonant antennas having high (>100 Ω) driving-point resistance.
Repository Citation
Brown, E. R.,
Verghese, S.,
& McIntosh, K. A.
(1997). Terahertz Photomixing in Low-Temperature-Grown GaAs. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 2, 363-365.
https://corescholar.libraries.wright.edu/physics/1140
DOI
10.1063/1.115292
