The Interaction of Point Defects With Dislocations in High-Purity Silver Above Room Temperature
Document Type
Article
Publication Date
1-1-1990
Identifier/URL
41065915 (Pure)
Abstract
Damping and modulus measurements were made on high-purity, polycrystalline silver during 1.5 MeV electron irradiations in the temperature range 310 K to 590 K. A suggested interpretation of the pinning rate data gave a value of 0.24+or-0.01 eV for the difference in interstitial migration energies in the lattice and the dislocation line and an approximate value of 0.25 eV for the binding energy of a vacancy to the dislocation line. An initial increase in the decrement (peaking effect) at the onset of radiation was observed at different amplitudes and at temperatures as high as 590 K.
Repository Citation
Grigsby, P. J.,
Simpson, H. M.,
& Hemsky, J. W.
(1990). The Interaction of Point Defects With Dislocations in High-Purity Silver Above Room Temperature. Journal of Physics Condensed Matter, 2 (2), 273-279.
https://corescholar.libraries.wright.edu/physics/1144
DOI
10.1088/0953-8984/2/2/003
