Direct Measurement of the Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon Ribbon
Document Type
Article
Publication Date
1-1-1985
Identifier/URL
40946262 (Pure)
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Abstract
The near-surface hydrogen profile was measured using the 15N hydrogen profiling technique in silicon ribbon grown by the edge-defined film-fed growth (EFG) process. This direct method has a high depth resolution of 10 – 30 Å, can be used to a depth of several microns, and can measure hydrogen in concentration of 100 at. ppm. By appropriate surface treatment we were able to observe for the first time the separation of the near-surface hydrogen profile in silicon from the surface hydrogen contamination layer. Using our technique, hydrogen profiling of the near-surface region revealed the existence of a subsurface hydrogen layer which acts as a barrier to the transfer of hydrogen into the bulk of both passivated and untreated silicon. The structure of this hydrogen barrier was measured for different plasma treatments.
Repository Citation
Jaworowski, A. E.,
Wielunski, L. S.,
& Listerman, T. W.
(1985). Direct Measurement of the Subsurface Hydrogen Barrier Layer in Plasma-Treated Silicon Ribbon. Materials Research Society Symposia Proceedings, 561-565.
https://corescholar.libraries.wright.edu/physics/1151
DOI
10.1557/proc-46-561
