1 MeV electron irradiation has been performed in degenerate, n‐type (n≂2×1017 cm-3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data. The results have been fitted with statistical models, and are most consistent with the usual E1 (EC-0.045 eV) and E2 (EC-0.15 eV) levels being the (-/0) and (0/+) transitions of the As vacancy, respectively. Also, an acceptor well below EC-0.15 eV is produced at a much higher rate than that of E1 and E2.
Hemsky, J. W.,
& Look, D. C.
(1992). Defect Models in Electron-Irradiated N-Type GaAs. Journal of Applied Physics, 72 (1), 78-81.
Copyright © 1992, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in the Journal of Applied Physics 72.1, and may be found at http://jap.aip.org/resource/1/japiau/v72/i1/p78_s1